The performance of integrated circuits (ICs) deteriorates under irradiation. It is commonly
believed that passive components in the IC such as through-silicon vias (TSVs) are …

This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

The general reduction in the thicknesses of critical dielectric layers driven by Moore's law
scaling has led to increasingly more manageable total-ionizing-dose (TID) response over …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Density functional theory (DFT) has emerged as a powerful tool to model defect properties
and dynamics at the quantum mechanical level. Results from targeted DFT calculations can …

Abstract Machine learning methods have proven to be powerful in various research fields. In
this paper, we show that research on radiation effects could benefit from such methods and …

The radiation response of complementary metal-oxide-semiconductor (CMOS) gate oxides
is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer …

We report new measurements of solar minimum ionizing radiation dose at the Moon
onboard the Lunar Reconnaissance Orbiter (LRO) from June 2009 through May 2010. The …

A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …