Emerging chalcogenide thin films for solar energy harvesting devices
Chalcogenide semiconductors offer excellent optoelectronic properties for their use in solar
cells, exemplified by the commercialization of Cu (In, Ga) Se2-and CdTe-based photovoltaic …
cells, exemplified by the commercialization of Cu (In, Ga) Se2-and CdTe-based photovoltaic …
Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites
The efficiency of kesterite-based solar cells is limited by various non-ideal recombination
paths, amongst others by a high density of defect states and by the presence of binary or …
paths, amongst others by a high density of defect states and by the presence of binary or …
Polarized Raman scattering analysis of Cu2ZnSnSe4 and Cu2ZnGeSe4 single crystals
The polarized Raman spectra of the Cu 2 ZnSnSe 4 and Cu 2 ZnGeSe 4 single crystals
were measured for various in-plane rotation angles on the basal (1 1 2) crystal facet. The …
were measured for various in-plane rotation angles on the basal (1 1 2) crystal facet. The …
Electronic structure of Cu2ZnGeSe4 single crystal: Ab initio FP-LAPW calculations and X-ray spectroscopy measurements
Abstract High-quality Cu 2 ZnGeSe 4 single crystal has been successfully grown by a
solution-fusion method and the crystal structure of the compound is refined within tetragonal …
solution-fusion method and the crystal structure of the compound is refined within tetragonal …
Very small tail state formation in Cu2ZnGeSe4
We find that coevaporated Cu 2 ZnGeSe 4 has an ideal bandgap for solar cells (1.39±0.01
eV) and shows quite reduced tail state absorption with a very low Urbach energy of 28 meV …
eV) and shows quite reduced tail state absorption with a very low Urbach energy of 28 meV …
Valence-band electronic structure and main optical properties of Cu2HgGeTe4: Theoretical simulation within a DFT framework and experimental XPS study
Comprehensive study from an experimental and theoretical viewpoint on the electronic
structure and optical properties is made for quaternary telluride Cu 2 HgGeTe 4. In …
structure and optical properties is made for quaternary telluride Cu 2 HgGeTe 4. In …
New Absorbers for Third-Generation Thin-Film Solar Cells Based on Cu–A–B–S–Se (A = Ba, Sr, Fe, Ni, or Mn; B = Si, Ge, or Sn) Quaternary Copper Compounds
MV Gapanovich, VV Rakitin, GF Novikov - Russian Journal of Inorganic …, 2022 - Springer
Literature on new semiconductors, quaternary copper compounds Cu2AIIBIVS (Se) 4 where
A= Mg, Ca, Sr, Ba, Fe, Ni, Co, Cd, or Cr; and B= Sn, Pb, Si, Ge, Ti, Zr, or Hf, is reviewed …
A= Mg, Ca, Sr, Ba, Fe, Ni, Co, Cd, or Cr; and B= Sn, Pb, Si, Ge, Ti, Zr, or Hf, is reviewed …
Study of structural and optoelectronic properties of Cu2Zn (Sn1− xGex) Se4 (x= 0 to 1) alloy compounds
In this work, the optoelectronic and structural properties of Cu 2 Zn (Sn 1− x Ge x) Se 4
(CZTGeSe) alloy compounds with x varying from 0 to 1 with a step of 0.1 were studied. The …
(CZTGeSe) alloy compounds with x varying from 0 to 1 with a step of 0.1 were studied. The …
Physical characterization of Cu2ZnGeSe4 thin films from annealing of Cu–Zn–Ge precursor layers
Abstract Cu 2 ZnGeSe 4 (CZGeSe) can be considered as a potential alternative for wide
band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated …
band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated …
Spectroscopic ellipsometry study of Cu2ZnSnSe4 bulk crystals
Using spectroscopic ellipsometry we investigated and analyzed the pseudo-optical
constants of Cu 2 ZnSnSe 4 bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV …
constants of Cu 2 ZnSnSe 4 bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV …