Hydrogen interactions with imperfections in crystalline metals and semiconductors are
reviewed. Emphasis is given to mechanistic experiments and theoretical advances …

Hydrogen is a common impurity in all semiconductors. Although it is sometimes deliberately
introduced, hydrogen often penetrates into the crystal during device processing. It interacts …

Hydrogen is, in principle, the simplest impurity in semiconductor materials. It is a common
constituent of many chemicals and gases used in the growth and processing of …

It is demonstrated for the first time that hydrogen can passivate shallow-donor impurities in n-
type single-crystal silicon, and a novel chemical-bonding model is proposed to explain the …

A review of the properties of hydrogen in crystalline semiconductors is presented. The
equilibrium lattice positions of the various states of hydrogen are detailed, together with the …

The nature of hydrogen bonding and diffusion in crystalline Si was investigated using an ab
initio self-consistent pseudopotential method. The relative energies of interstitial atomic …

Several new infrared absorption bands have been discovered in hydrogen passivated
silicon doped with P, As, and Sb. The frequency shift upon substitution of D for H confirms …

The stable structures, vibrational modes, and passivation mechanisms of an interstitial
hydrogen atom in boron-and phosphorus-doped crystalline silicon are determined by an ab …

Several deuteration experiments on crystalline silicon have been performed for various
shallow dopant impurities (B and Al for p-type silicon; P and As for n-type silicon) and for …

Omnipresent impurities such as carbon, oxygen, silicon, and hydrogen play important roles,
both detrimental and beneficial, in the fabrication of solid-state devices. The electronic and …