Halogen‐incorporated Sn catalysts for selective electrochemical CO2 reduction to formate
Electrochemically reducing CO2 to valuable fuels or feedstocks is recognized as a
promising strategy to simultaneously tackle the crises of fossil fuel shortage and carbon …
promising strategy to simultaneously tackle the crises of fossil fuel shortage and carbon …
Diamond-germanium composite films grown by microwave plasma CVD
We report on novel microcrystalline diamond-germanium composite films grown by
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
microwave plasma-assisted chemical vapor deposition in CH 4–H 2-GeH 4 mixtures on Si …
Improving carrier mobility of polycrystalline Ge by Sn do**
To improve the performance of electronic devices, extensive research efforts have recently
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy… - Applied Physics …, 2017 - pubs.aip.org
GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
Indirect-to-direct band gap transition in relaxed and strained Ge1− x− ySixSny ternary alloys
Sn-containing group IV semiconductors create the possibility to independently control strain
and band gap thus providing a wealth of opportunities to develop an entirely new class of …
and band gap thus providing a wealth of opportunities to develop an entirely new class of …
Impact of thickness on the structural properties of high tin content GeSn layers
J Aubin, JM Hartmann, A Gassenq, L Milord… - Journal of Crystal …, 2017 - Elsevier
We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced
Pressure–Chemical Vapor Deposition cluster tool using digermane (Ge 2 H 6) and tin …
Pressure–Chemical Vapor Deposition cluster tool using digermane (Ge 2 H 6) and tin …
Theoretical investigation of performance enhancement in GeSn/SiGeSn type-II staggered heterojunction tunneling FET
We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
Microporous poly-and monocrystalline diamond films produced from chemical vapor deposited diamond–germanium composites
We report on a novel method for porous diamond fabrication, which is based on the
synthesis of diamond–germanium composite films followed by etching of the Ge component …
synthesis of diamond–germanium composite films followed by etching of the Ge component …
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared …
Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …
advanced electronic and photonic devices with attractive features such as transferability and …
One-Step fabrication of GeSn branched nanowires
We report for the first time the self-catalyzed, single-step growth of branched GeSn
nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures …
nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures …