The continuous inverse class-F mode with resistive second-harmonic impedance
In this paper, an extended version of the continuous class-F-1 mode power amplifier (PA)
design approach is presented. A new formulation describing the current waveform in terms …
design approach is presented. A new formulation describing the current waveform in terms …
A design technique for concurrent dual-band harmonic tuned power amplifier
In this paper, a novel technique to design concurrent dual-band high-efficiency harmonic
tuned (HT) power amplifiers (PAs) is presented. The proposed approach is based on a …
tuned (HT) power amplifiers (PAs) is presented. The proposed approach is based on a …
A wideband multiharmonic empirical large-signal model for high-power GaN HEMTs with self-heating and charge-trap** effects
KS Yuk, GR Branner… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
A complete empirical large-signal model for high-power AlGaN/GaN HEMTs (GaN HEMT)
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
utilizing an improved drain current (Ids) formulation with self-heating and charge-trap** …
Nonlinear dispersive modeling of electron devices oriented to GaN power amplifier design
This paper presents a new modeling approach accounting for the nonlinear description of
low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron …
low-frequency dispersive effects (due to thermal phenomena and traps) affecting electron …
A broadband Doherty power amplifier for sub-6GHz 5G applications
This paper presents a novel and accurate procedure for designing a Doherty power
amplifier (DPA) for wireless systems. The method is based on a systematic approach to …
amplifier (DPA) for wireless systems. The method is based on a systematic approach to …
An Extensive Experimental Analysis of the Kink Effects in and for a GaN HEMT
This paper, for the first time, analyzes in detail the kink phenomenon in S 22 as observed in
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
GaN HEMT technology. To gain a comprehensive understanding, the kink effect (KE) is …
High-periphery GaN HEMT modeling up to 65 GHz and 200° C
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
potentialities of this kind of active solid-state electronic device at its best, the experiments are …
A 68% efficiency, C-band 100W GaN power amplifier for space applications
T Yamasaki, Y Kittaka, H Minamide… - 2010 IEEE MTT-S …, 2010 - ieeexplore.ieee.org
This paper describes a high efficiency (68%), high output power (100 W), high reliability
GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd …
GaN HEMT amplifier for C-band space applications. The high efficiency is achieved by 2nd …
A highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11 ac application
B Liu, M Mao, D Khanna, P Choi… - IEEE Microwave and …, 2018 - ieeexplore.ieee.org
In this letter, a novel compact on-chip output matching network to achieve harmonic
impedance matching is proposed. With the proposed matching network, a highly efficient …
impedance matching is proposed. With the proposed matching network, a highly efficient …
S band hybrid power amplifier in GaN technology with input/output multi harmonic tuned terminations
In this paper, the design, fabrication, and measurements of an S band multi harmonic tuned
power amplifier in GaN technology is described. The amplifier has been designed by …
power amplifier in GaN technology is described. The amplifier has been designed by …