Investigations on the CdS passivated anodic oxide–InP interface for MOS structures
Thin layers of cadmium sulfide have been deposited on〈 111〉 n-InP using the chemical
bath deposition technique at room temperature. X-ray photoelectron spectroscopy (XPS) …
bath deposition technique at room temperature. X-ray photoelectron spectroscopy (XPS) …
InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding
M Forsberg, D Pasquariello, M Camacho… - Journal of electronic …, 2003 - Springer
In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring
thermally grown SiO 2 to InP from oxidized Si wafers using oxygen plasma assisted wafer …
thermally grown SiO 2 to InP from oxidized Si wafers using oxygen plasma assisted wafer …
BaTiO3 as an insulating layer for InP-based metal-insulator–semiconductor structures
Barium titanate (BaTiO3) films were successfully deposited on InP substrates using sol–gel
process. The composition of the film has been analysed using X-ray photoelectron …
process. The composition of the film has been analysed using X-ray photoelectron …
Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
The post-breakdown (BD) current-voltage (IV) characteristics in MgO/Si and MgO/InP stacks
with metal gate were investigated. We show that both stacks exhibit the soft and hard BD …
with metal gate were investigated. We show that both stacks exhibit the soft and hard BD …
Deep Level Transient Spectroscopic Analysis on Au/SiO2/InP MOS Structures
RR Sumathi, M Senthil Kumar… - physica status solidi (a …, 1999 - Wiley Online Library
Abstract Deep Level Transient Spectroscopy (DLTS) studies have been carried out on
Au/SiO2/InP Metal–Oxide–Semiconductor (MOS) diodes. Majority and minority carrier traps …
Au/SiO2/InP Metal–Oxide–Semiconductor (MOS) diodes. Majority and minority carrier traps …
Post-breakdown conduction in metal gate/MgO/InP structures
The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on
indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report …
indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report …
Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation
A Mahdjoub, H Bouredoucen… - … Quantum Electronics & …, 2004 - dspace.nbuv.gov.ua
Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating
evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A …
evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A …
[PDF][PDF] Suivi technologique par photoluminescence appliqué
A Mahdjoub, H Bouredoucen - asjp.cerist.dz
Des polyphosphates condensés próches de In (PO) peuvent être obtenus par voie
électrochimique. Ces oxydes présentent de bonnes propriétés diélectriques et une structure …
électrochimique. Ces oxydes présentent de bonnes propriétés diélectriques et une structure …
Photoluminescence Characterization of Al/Al_2O_3/InP MIS Structures passivated by anodic oxidation
Abstract Metal-insulator-semiconductor (MIS) structures were produced by electron beam
evaporation of Al_2O_3 on InP. Polyphosphate thin films of thickness 100-150 Å were used …
evaporation of Al_2O_3 on InP. Polyphosphate thin films of thickness 100-150 Å were used …
[PDF][PDF] MIS Structures on InP Material Passivated by Anodic Oxidation. Characterization by Photoluminescence
Condensed polyphosphates close to In (PO3) 3 structure can be obtained by
electrochemical oxidation. These oxides have good dielectric properties and a flexible …
electrochemical oxidation. These oxides have good dielectric properties and a flexible …