Single-crystal silicon carbide (SiC) has been widely applied in the military and civil fields
because of its excellent physical and chemical properties. However, as is typical in hard-to …

SiC is essential for next-generation semiconductors and nuclear plant components. Its
performance is strongly influenced by its thermal conductivity, which is highly sensitive to its …

The structural, electronic, adherent and mechanical properties of the Zr/3C-, 4H-, and 6H-
SiC interfaces are systematically investigated by first-principles calculations, where four …

In this paper, theoretical models of the critical indentation depth and critical force on brittle
materials using cleavage strength and contact theory are proposed. A Berkovich indenter is …

SiC polytypes have been studied for decades, both experimentally and with atomistic
simulations, yet no consensus has been reached on the factors that determine their stability …

The effects of various process variables on the formation of polytypes during SiC single
crystal growths have been investigated using atomistic simulations based on an empirical …

A comparative study on the mechanical properties of three different SiC polytypes (3C, 4H,
and 6H) under ambient and high pressures was conducted through first-principles …

Rapid advancements in machine-learning methods have led to the emergence of machine-
learning-based interatomic potentials as a new cutting-edge tool for simulating large …

The pressure-dependent lattice dynamics of 4H-SiC is investigated using diamond anvil cell,
and compared with those of 3C-and 6H-SiC. It is found that both the zone-center longitudinal …

Silicon carbide is an important material with applications in numerous domains, but for
which our knowledge of basic properties like elastic constants is surprisingly limited …