Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

The discovery of emerging two-dimensional (2D) sliding ferroelectricity has opened up an
important approach to constructing ferroelectric materials at the atomic scale. This review …

Abstract Aluminum Scandium Nitride (Al1− xScxN) has received attention for its exceptional
ferroelectric properties, whereas the fundamental mechanism determining its dynamic …

Sliding ferroelectricity enables materials with intrinsic centrosymmetric symmetry to generate
spontaneous polarization via stacking engineering, extending the family of ferroelectric …

Neuromorphic hardware facilitates rapid and energy‐efficient training and operation of
neural network models for artificial intelligence. However, existing analog in‐memory …

In this Letter, we demonstrate heteroepitaxial α-Ga 2 O 3 MOSFETs using an aluminum
scandium nitride (AlScN) ferroelectric gate stack. Owing to ferroelectric effects, α-Ga 2 O 3 …

Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics
because they can be easily integrated with mainstream semiconductor technology. Sc …

Multi‐level non‐volatile ferroelectric memories are emerging as promising candidates for
data storage and neuromorphic computing applications, due to the enhancement of storage …

Boron (B)-substituted wurtzite AlN (Al1–x B x N) is a recently discovered wurtzite ferroelectric
material that offers several advantages over ferroelectric Hf1–x Zr x O2 and PbZr1–x Ti x O3 …

The conventional reconfiguration of transistors requires an additional independent terminal
for controllable gate input, which complicates the device structure and makes circuit …