The improvement of the embedded Ag nanoislands on the performance of Au/Ag/HfOx/HfO2/Ag-NIs/Au devices
Y Zhang, F Long, Z Qu, Z Xu, P Lv, B Zhang - Journal of Materials Science …, 2023 - Springer
To search for ways to improve the performance of selectors, crossbar-structured Au/Ag/HfO x
(2 nm)/HfO2 (4 nm)/Ag-NIs/Au devices with embedded Ag nanoislands (Ag-NIs) and dual …
(2 nm)/HfO2 (4 nm)/Ag-NIs/Au devices with embedded Ag nanoislands (Ag-NIs) and dual …
Combined Experimental and Periodic DFT Study of the Size Dependence of Adsorption Properties of Oxide‐Supported Metal Nanoclusters: A Case of NO on Ni/Al2O3
TT Magkoev, Y Men… - Surface and …, 2024 - Wiley Online Library
It is demonstrated by means of ultra high vacuum (UHV) surface‐sensitive techniques and
periodic density functional theory (DFT) calculations that the electronic and NO− adsorption …
periodic density functional theory (DFT) calculations that the electronic and NO− adsorption …
[HTML][HTML] Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3
Thin films of Al 2 O 3 are deposited using in situ ultraviolet (UV) light enhanced atomic layer
deposition (ALD) with trimethylaluminum and H 2 O and compared to those deposited using …
deposition (ALD) with trimethylaluminum and H 2 O and compared to those deposited using …
Size Dependence of the Adsorption Properties of Nickel Clusters on the Surface of Aluminum Oxide
TT Magkoev, E Nadimi, IV Tvauri, VB Zaalishvili… - Journal of Surface …, 2023 - Springer
Despite the recent activity in the field of studying the properties of systems formed during the
adsorption of metal atoms on the surface of oxides, many questions of a fundamental nature …
adsorption of metal atoms on the surface of oxides, many questions of a fundamental nature …
[PDF][PDF] 5 IMPROVEMENT IN TURN-ON VOLTAGE VIA DEFECT-ASSISTED TUNNELING IN Al2O3 METAL/INSULATOR/METAL DIODES WITH ATOMIC LAYER …
KEK Holden, BM Kupp, JL Peterson… - AN ABSTRACT OF … - ir.library.oregonstate.edu
Metal/insulator/metal (MIM) quantum tunneling diodes are a relatively dated technology, first
mentioned and potentially first theorized in a tangent discussion in the late 40's by Torrey et …
mentioned and potentially first theorized in a tangent discussion in the late 40's by Torrey et …
[PDF][PDF] 6 ENABLING FABRICATION OF METAL/INSULATOR/METAL DIODES AT LOW TEMPERATURES USING ULTRAVIOLET PHOTO-ENHANCED ATOMIC …
KEK Holden, SM Witsell… - AN ABSTRACT OF THE … - ir.library.oregonstate.edu
Atomic layer deposition (ALD) is a thin film deposition technique based on alternating
injections of gaseous precursors, selected such that they result in selfterminating gas …
injections of gaseous precursors, selected such that they result in selfterminating gas …
Atomic Layer Processing for Next-Generation Microelectronic Materials
KEK Holden - 2021 - ir.library.oregonstate.edu
Atomic layer deposition (ALD) is an enabling technique for many new micro-and nanoscale
technologies. The self-limiting surface chemical reactions by which ALD fundamentally …
technologies. The self-limiting surface chemical reactions by which ALD fundamentally …
ВЗАИМОДЕЙСТВИЕ МОЛЕКУЛ МОНОКСИДА АЗОТА (NO) С ПОВЕРХНОСТЬЮ СИСТЕМЫ, ОБРАЗОВАННОЙ ОСАЖДЕНИЕМ НАНОРАЗМЕРНЫХ …
ИВ Тваури, АП Блиев, ТТ Магкоев - SCIENCE AND TECHNOLOGY …, 2023 - elibrary.ru
Методами анализа поверхности в сверхвысоком вакууме показано, что электронные и
адсорбционные свойства наноразмерных кластеров никеля на поверхности оксида …
адсорбционные свойства наноразмерных кластеров никеля на поверхности оксида …