Dimethylaluminum isopropoxide (DMAI) is attracting attention as an alternative precursor for
atomic layer deposition (ALD) of aluminum oxide (Al 2 O 3). However, the surface chemical …

Published papers on atomic-scale simulation of the atomic layer deposition (ALD) process
are reviewed. The main topic is reaction mechanism, considering the elementary steps of …

In this work, we compare the initial growth trends of atomic layer-deposited aluminum oxide
(Al2O3) using three different Al precursors and H2O as the oxygen source on hydroxyl …

Routes to area-and especially site-selective atomic layer deposition (ALD) remain an
enticing challenge in precision surface science, despite the potentially game-changing …

In this work, the authors used density-functional theory methods and x-ray photoelectron
spectroscopy to study the chemical composition and growth rate of HfO 2, Al 2 O 3, and TiO …

Knowledge of the detailed mechanism behind the atomic layer deposition (ALD) can greatly
facilitate the optimization of the manufacturing process. Computational modeling can …

Al 2 O 3 thin films were deposited by plasma-enhanced chemical vapor deposition using a
dimethylaluminum isopropoxide precursor in the absence of additional oxygen sources. The …

In this paper, we use density functional theory (DFT) calculations to investigate the initial
surface reactions involved in the atomic layer deposition (ALD) of Al2O3 from H2O and Al …