Extreme ultraviolet resist materials for sub-7 nm patterning

L Li, X Liu, S Pal, S Wang, CK Ober… - Chemical Society …, 2017 - pubs.rsc.org
Continuous ongoing development of dense integrated circuits requires significant
advancements in nanoscale patterning technology. As a key process in semiconductor high …

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Q Liu, Y Miao, LF Villalobos, S Li, HY Chi, C Chen… - Nature Materials, 2023 - nature.com
Zeolitic imidazolate frameworks (ZIFs) are a subset of metal–organic frameworks with more
than 200 characterized crystalline and amorphous networks made of divalent transition …

Recent advances in non-chemically amplified photoresists for next generation IC technology

S Ghosh, CP Pradeep, SK Sharma, PG Reddy… - RSC …, 2016 - pubs.rsc.org
While chemically amplified resists (CARs) have been dominating the semiconductor
industries over the past few decades, particularly in the area of computer chip fabrication …

[HTML][HTML] Beyond EUV lithography: a comparative study of efficient photoresists' performance

N Mojarad, J Gobrecht, Y Ekinci - Scientific reports, 2015 - nature.com
Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning
integrated circuits and reaching sub-10-nm resolution within the next decade. Should …

New generation electron beam resists: a review

AS Gangnaik, YM Georgiev, JD Holmes - Chemistry of Materials, 2017 - ACS Publications
The semiconductor industry has already entered the sub-10 nm region, which has led to the
development of cutting-edge fabrication tools. However, there are other factors that hinder …

Molecular layer deposition of a hafnium-based hybrid thin film as an electron beam resist

J Shi, A Ravi, NE Richey, H Gong… - ACS Applied Materials & …, 2022 - ACS Publications
The development of new resist materials is vital to fabrication techniques for next-generation
microelectronics. Inorganic resists are promising candidates because they have higher etch …

Studying the mechanism of hybrid nanoparticle photoresists: effect of particle size on photopatterning

L Li, S Chakrabarty, K Spyrou, CK Ober… - Chemistry of …, 2015 - ACS Publications
Hf-based hybrid photoresist materials with three different organic ligands were prepared by
a sol–gel-based method, and their patterning mechanism was investigated in detail. All …

Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

N Mojarad, M Hojeij, L Wang, J Gobrecht, Y Ekinci - Nanoscale, 2015 - pubs.rsc.org
All nanofabrication methods come with an intrinsic resolution limit, set by their governing
physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography …

Oxo-Cluster-Based Zr/HfIV Separation: Shedding Light on a 70-Year-Old Process

JA Sommers, L Palys, NP Martin, DB Fast… - Journal of the …, 2022 - ACS Publications
Zirconium and hafnium in the tetravalent oxidation state are considered the two most similar
elements on the periodic table, based on their coexistence in nature and their identical solid …

Partial decarboxylation of hafnium oxide clusters for high resolution lithographic applications

PC Liao, PH Chen, YF Tseng, TA Shih, TA Lin… - Journal of Materials …, 2022 - pubs.rsc.org
This work shows a great influence on the EUV performance of hafnium carboxylate clusters
via slight structural modification. Treatment of hexameric hafnium clusters Hf6O4 (OH) 4 …