This article critically reviews the materials, processing and reliability of InP high electron
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …

Solid, liquid, and gaseous states of matter can exist and acquire unique properties when
reduced in size into a nanometer domain. This Colloquium explores the approaches to …

Both classical and quantum electrodynamics predict the existence of dipole-dipole long-
range electrodynamic intermolecular forces; however, these have never been hitherto …

We describe the activation of out-of-equilibrium collective oscillations of a macromolecule as
a classical phonon condensation phenomenon. If a macromolecule is modeled as an open …

The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …

We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data
rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a …

In this work, we explore high frequency collective phenomena present in InGaAs HEMTs
which lead to a peak in the current noise spectrum and enhance their DC response to THz …

A method for the heterodyne detection of terahertz (THz) signals is proposed. A high
electron mobility transistor is used as a nonlinear element, while the optical beating of two …

Based on a suite of molecular dynamics simulations, we propose a strategy for producing
non-ideal plasmas with controllable properties over a wide range of densities between those …

The performance of electronic devices for the detection and generation of THz waves might
be potentially improved by resonances or instabilities due to plasma waves. The analytical …