A WSe 2 vertical field emission transistor
We report the first observation of a gate-controlled field emission current from a tungsten
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …
Contact resistance and mobility in back-gate graphene transistors
The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …
technological exploitation of graphene in electronic devices and sensors. High contact …
Atomic insight into the effects of precursor clusters on monolayer WSe 2
Y Zhang, Y Chang, L Zhao, H Liu, J Gao - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been attracting much
attention due to their rich physical and chemical properties. At the end of the chemical vapor …
attention due to their rich physical and chemical properties. At the end of the chemical vapor …
Controllable growth of two-dimensional WSe 2 using salt as co-solvent
X Wang, Y Li, L Zhuo, J Zheng, X Peng, Z Jiao… - …, 2018 - pubs.rsc.org
Various structures of two-dimensional (2D) WSe2 were controllably grown in a chemical
vapor deposition (CVD) system. Using salt as the co-solvent and surfactant, we were able to …
vapor deposition (CVD) system. Using salt as the co-solvent and surfactant, we were able to …
Passively Q-switched Tm:YAP laser based on WSe2/CuO heterojunction saturable absorber
Y Yang, L Gao, Y Han, Q Gao, R Lan, Y Shen - Applied Physics B, 2024 - Springer
WSe2 and CuO belong to transition metal chalcogenides (TMDs) and transition metal oxides
(TMOs), respectively, and both are semiconductor materials that have been applied in …
(TMOs), respectively, and both are semiconductor materials that have been applied in …
2D WS2/WSe2(Er) Heterojunction for High Performance Photodetectors
Y Chen, X Liang, S Liu, Z Huang, Z Wu… - Advanced Materials …, 2024 - Wiley Online Library
Abstract 2D transition metal dichalcogenides and their heterojunctions have demonstrated
great potentialities for applications in optoelectronics, and rare‐earth do** has proven an …
great potentialities for applications in optoelectronics, and rare‐earth do** has proven an …
Lateral growth of WSe2 monolayer film in a confined reaction environment via an Au vapor-assisted CVD: A systematic and comparative study with a NaCl-assisted …
Abstract Two-dimensional (2D) monolayer tungsten diselenide (WSe 2) is of great interest in
optoelectronic and photo (electro) catalytic applications due to its direct optical band gap …
optoelectronic and photo (electro) catalytic applications due to its direct optical band gap …
Effect of 60 MeV nitrogen ion irradiation on few layer WSe2 nanosystems
This study explores the impact of 60 MeV N 5+ ion irradiation on few layer WSe 2 systems.
The structural analysis exhibit an anomalous variation in crystallite size with increasing grain …
The structural analysis exhibit an anomalous variation in crystallite size with increasing grain …
Large area chemical vapor deposition and spectroscopic properties of bilayer WSe2
L Xu, J Zhou, Z He, J Hu, M Liu - Materials Letters, 2021 - Elsevier
Large area preparation of WSe 2 in different atomic layers are essential for practical
applications in integrated electronic/photoelectric devices. Compared with the monolayer …
applications in integrated electronic/photoelectric devices. Compared with the monolayer …
Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. A high contact …
technological exploitation of graphene in electronic devices and sensors. A high contact …