Ultrafast dynamics and ablation mechanism in femtosecond laser irradiated Au/Ti bilayer systems
The significance of ultrafast laser-induced energy and mass transfer at interfaces has been
growing in the field of nanoscience and technology. Nevertheless, the complexity arising …
growing in the field of nanoscience and technology. Nevertheless, the complexity arising …
Dual-wavelength femtosecond laser-induced single-shot damage and ablation of silicon
An experimental and theoretical study of laser-induced damage and ablation of silicon by
two individual femtosecond pulses of different wavelengths, 1030 and 515 nm, is performed …
two individual femtosecond pulses of different wavelengths, 1030 and 515 nm, is performed …
Non-thermal regimes of laser annealing of semiconductor nanostructures: Crystallization without melting
As-prepared nanostructured semiconductor materials are usually found in an amorphous
form, which needs to be converted into a crystalline one for improving electronic properties …
form, which needs to be converted into a crystalline one for improving electronic properties …
Single-layer subwavelength femtosecond-laser-induced confined nanocrystallization in multistack dielectrics
R Ricca, Y Bellouard - Physical Review Applied, 2023 - APS
We demonstrate extreme laser-induced modification confinement in a stack of dielectric
layers, along the optical axis, without the use of tight focusing. Specifically, we show that an …
layers, along the optical axis, without the use of tight focusing. Specifically, we show that an …
Exploring fs-laser irradiation damage subthreshold behavior of dielectric mirrors via electrical measurements
With ultrafast laser systems reaching presently 10 PW peak power or operating at high
repetition rates, research towards ensuring the long-term, trouble-free performance of all …
repetition rates, research towards ensuring the long-term, trouble-free performance of all …
Wide-spectrum antireflective properties of germanium by femtosecond laser raster-type in situ repetitive direct writing technique
K Wang, Y Zhang, J Chen, Q Li, F Tang, X Ye, W Zheng - Coatings, 2024 - mdpi.com
A femtosecond laser raster-type in situ repetitive direct writing technique was used for the
fabrication of anti-reflective microhole structures in Germanium (Ge) in the visible near …
fabrication of anti-reflective microhole structures in Germanium (Ge) in the visible near …
Ultrafast infrared laser crystallization of amorphous Ge films on glass substrates
Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort
near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses …
near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses …
Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures
Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous
nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid …
nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid …
A novel approach for the removal of oxide film to achieve seamless joining during hot-compression bonding
The oxide film on the substrate surfaces can severely hinder the bonding quality during hot-
compression bonding (HCB). To address the above issue, this investigation proposes a …
compression bonding (HCB). To address the above issue, this investigation proposes a …
On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation
In this work, a unified numerical model is used to determine the melting thresholds and to
investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs …
investigate the early stages of melting of several crystalline semiconductors (Si, Ge, GaAs …