In one embodiment, a method of manufacturing a semicon ductor device includes forming a
first film on a substrate. The method further includes housing the substrate provided with the …

Implementations disclosed herein generally relate to meth ods of forming silicon oxide films.
The methods can include performing silylation on the surface of the substrate having …

(57) ABSTRACT A semiconductor device includes active fins on a substrate, a first isolation
pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of …

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating
or switching and having potential barriers; Capacitors or resistors having potential barriers …

(57) ABSTRACT A method for fabricating a semiconductor device includes forming a via in a
first dielectric layer arranged on a metal layer. The via exposes a portion of the metal layer …

Gate structures and gate spacers, along with methods of forming such, are described. In an
embodiment, a structure includes an active area on a substrate, a gate structure on the …

In one embodiment, a method of manufacturing a semicon ductor device includes forming a
first film on a substrate. The method further includes housing the substrate provided with the …

Implementations disclosed herein generally relate to methods of forming silicon oxide films.
The methods can include performing silylation on the surface of the substrate having …