Prospects of III-nitride optoelectronics grown on Si
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
Atom probe tomography of electronic materials
TF Kelly, DJ Larson, K Thompson, RL Alvis… - Annu. Rev. Mater …, 2007 - annualreviews.org
The state of application of atom probe tomography to electronic materials is assessed. The
benefits and challenges of the technique are discussed with regard to its impact on this field …
benefits and challenges of the technique are discussed with regard to its impact on this field …
Efficiency Drop in Green Light Emitting Diodes: The Role of Random Alloy Fluctuations
White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently
offer the highest overall efficiency for solid state lighting applications. Although current …
offer the highest overall efficiency for solid state lighting applications. Although current …
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
X Zhao, B Tang, L Gong, J Bai, J **… - Applied Physics Letters, 2021 - pubs.aip.org
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
Solid-state lighting
CJ Humphreys - MRS bulletin, 2008 - cambridge.org
Electricity generation is the main source of energy-related greenhouse gas emissions and
lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is …
lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is …
Defect related issues in the “current roll-off” in InGaN based light emitting diodes
B Monemar, BE Sernelius - Applied Physics Letters, 2007 - pubs.aip.org
Defect related contributions to the reduction of the internal quantum efficiency of InGaN-
based multiple quantum well light emitting diodes under high forward bias conditions are …
based multiple quantum well light emitting diodes under high forward bias conditions are …
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …
Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
Composition map** in InGaN by scanning transmission electron microscopy
We suggest a method for chemical map** that is based on scanning transmission electron
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering
MJ Galtrey, RA Oliver, MJ Kappers… - Applied physics …, 2007 - pubs.aip.org
An In x Ga 1− x N∕ Ga N multiple quantum well (MQW) structure that exhibited bright
photoluminescence was examined with the three-dimensional atom probe. The quantum …
photoluminescence was examined with the three-dimensional atom probe. The quantum …