A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM …
Aluminium gallium nitride (AlGaN)-based deep ultraviolet (DUV) light-emitting diodes
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …
(LEDs) suffer from low internal quantum efficiency (IQE) and serious efficiency droop. One …
[HTML][HTML] Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments
Q Zhang, Q Li, W Zhang, H Zhang, F Zheng… - Applied Surface …, 2022 - Elsevier
BAlN is a promising ultrawide bandgap semiconductor, but systematic studies of its bandgap
are scarce. Here, bandgap engineering of BAlN containing the phase transition factor (from …
are scarce. Here, bandgap engineering of BAlN containing the phase transition factor (from …
Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers
In this work, the optical performance of AlGaN-based deep ultraviolet light-emitting diode
(DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated …
(DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated …
Morphology and carrier mobility of high-B-content B x Al 1− x N ternary alloys from an ab initio global search
The excellent properties of III-nitrides and their alloys have led to significant applications in
optoelectronic devices. Boron, the lightest IIIA group element, makes it possible to extend …
optoelectronic devices. Boron, the lightest IIIA group element, makes it possible to extend …
[HTML][HTML] Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
F Zhao, W Jia, H Dong, Z Jia, T Li, C Yu, Z Zhang, B Xu - AIP Advances, 2022 - pubs.aip.org
Owing to the COVID-19 outbreak, sterilization of deep-ultraviolet light-emitting diodes (DUV
LEDs) has attracted increasing attention. Effectively improving the radiative recombination …
LEDs) has attracted increasing attention. Effectively improving the radiative recombination …
Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source
This study focuses on modeling and analyzing a multi-wavelength (MW) ultraviolet light-
emitting diode (UV LED) equipped with grading transition layers, which holds potential as a …
emitting diode (UV LED) equipped with grading transition layers, which holds potential as a …
Enhancing the Performance of GaN-Based Light-Emitting Diodes by Incorporating a Junction-Type Last Quantum Barrier
J Wang, Y Xu, X Wang, Z Xu, M Gong - Electronics, 2024 - mdpi.com
In this paper, an nip-type GaN barrier for the final quantum well, which is closest to the p-
type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the …
type GaN cap layer, is proposed for nitride light-emitting diodes (LEDs) to enhance the …
Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes
The hole concentration in the strain-compensated B 0.14 Al 0.86 N/Al 0.5 Ga 0.5 N
superlattice (SCSL) is investigated. Compared with the Al 0.6 Ga 0.4 N/Al 0.5 Ga 0.5 N SL …
superlattice (SCSL) is investigated. Compared with the Al 0.6 Ga 0.4 N/Al 0.5 Ga 0.5 N SL …
Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating …
X Hu, L Kong, P Yang, N Gao, K Huang… - Journal of Physics D …, 2023 - iopscience.iop.org
A comparable concentration of carriers injected and transported into the active region, that
is, balanced hole and electron injection, significantly affects the optoelectronic performance …
is, balanced hole and electron injection, significantly affects the optoelectronic performance …
53‐1: Invited Paper: Enhanced Performance of III‐Nitride‐Based Light‐Emitting Diodes Through Novel Band Engineering and Fabrication Technology
53â•’1: <i>Invited Paper:</i> Enhanced Performance of IIIâ•’Nitrideâ•’Based Lightâ•’Emitting
Dio Page 1 Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel …
Dio Page 1 Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel …