A systematic literature review on binary neural networks

R Sayed, H Azmi, H Shawkey, AH Khalil… - IEEE Access, 2023 - ieeexplore.ieee.org
This paper presents an extensive literature review on Binary Neural Network (BNN). BNN
utilizes binary weights and activation function parameters to substitute the full-precision …

FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis

W Gul, M Shams, D Al-Khalili - Micromachines, 2023 - mdpi.com
Artificial intelligence (AI) has revolutionized present-day life through automation and
independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM …

SRAM-based in-memory computing macro featuring voltage-mode accumulator and row-by-row ADC for processing neural networks

J Mu, H Kim, B Kim - … Transactions on Circuits and Systems I …, 2022 - ieeexplore.ieee.org
This paper presents a mixed-signal SRAM-based in-memory computing (IMC) macro for
processing binarized neural networks. The IMC macro consists of (16K) SRAM-based …

A 65 nm 73 kb SRAM-based computing-in-memory macro with dynamic-sparsity controlling

X Qiao, J Song, X Tang, H Luo, N Pan… - … on Circuits and …, 2022 - ieeexplore.ieee.org
For neural network (NN) applications at the edge of AI, computing-in-memory (CIM)
demonstrates promising energy efficiency. However, when the network size grows while …

An energy efficient all-digital time-domain compute-in-memory macro optimized for binary neural networks

J Lou, F Freye, C Lanius… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The deployment of neural networks on edge devices has created a growing need for energy-
efficient computing. In this paper, we propose an all-digital standard cell-based time-domain …

Scalable time-domain compute-in-memory BNN engine with 2.06 POPS/W energy efficiency for edge-AI devices

J Lou, F Freye, C Lanius, T Gemmeke - Proceedings of the Great Lakes …, 2023 - dl.acm.org
Time-domain (TD) computing has attracted attention for its high computing efficiency and
suitability for applications on energy-constrained edge devices. In this paper, we present a …

IMPACT: A 1-to-4b 813-TOPS/W 22-nm FD-SOI Compute-in-Memory CNN Accelerator Featuring a 4.2-POPS/W 146-TOPS/mm2 CIM-SRAM With Multi-Bit Analog …

A Kneip, M Lefebvre, J Verecken… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
Amid a strife for ever-growing AI processing capabilities at the edge, compute-in-memory
(CIM) SRAMs involving current-based dot-product (DP) operators have become excellent …

From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits

Z Zhang, J Chen, X Chen, A Guo, B Wang… - Science China …, 2023 - Springer
The rapid growth of CMOS logic circuits has surpassed the advancements in memory
access, leading to significant “memory wall” bottlenecks, particularly in artificial intelligence …

All-digital time-domain compute-in-memory engine for binary neural networks with 1.05 POPS/W energy efficiency

J Lou, C Lanius, F Freye, T Stadtmann… - ESSCIRC 2022-IEEE …, 2022 - ieeexplore.ieee.org
This paper presents an all-digital time-domain compute-in-memory (TDCIM) engine for
binary neural networks (BNNs), which is based on commercial standard cells facilitating …

Memristive devices for time domain compute-in-memory

F Freye, J Lou, C Bengel, S Menzel… - IEEE Journal on …, 2022 - ieeexplore.ieee.org
Analog compute schemes and compute-in-memory (CIM) have emerged in an effort to
reduce the increasing power hunger of convolutional neural networks (CNNs), which …