Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Two dimensional electron gases in Al x Ga 1− x N/GaN based heterostructures, suitable for
high electron mobility transistors, are induced by strong polarization effects. The sheet …
high electron mobility transistors, are induced by strong polarization effects. The sheet …
Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes
F Qian, S Gradecak, Y Li, CY Wen, CM Lieber - Nano letters, 2005 - ACS Publications
We report the growth and characterization of core/multishell nanowire radial
heterostructures, and their implementation as efficient and synthetically tunable multicolor …
heterostructures, and their implementation as efficient and synthetically tunable multicolor …
Gallium nitride nanowire nanodevices
Field effect transistors (FETs) based on individual GaN nanowires (NWs) have been
fabricated. Gate-dependent electrical transport measurements show that the GaN NWs are n …
fabricated. Gate-dependent electrical transport measurements show that the GaN NWs are n …
Cleaning of AlN and GaN surfaces
SW King, JP Barnak, MD Bremser, KM Tracy… - Journal of Applied …, 1998 - pubs.aip.org
Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been
investigated and achieved. Exposure to HF and HCl solutions produced the lowest …
investigated and achieved. Exposure to HF and HCl solutions produced the lowest …
Microscopic origins of surface states on nitride surfaces
Microscopic origins of surface states on nitride surfacesa) | Journal of Applied Physics | AIP
Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …
Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting
DOI: 10.1002/adma. 201602274 on GaN-based photocatalysts and photoelectrodes,
including both planar and nanoscale structures, have shown rather low quantum efficiency …
including both planar and nanoscale structures, have shown rather low quantum efficiency …
Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
T Hashizume, S Ootomo, S Oyama, M Konishi… - Journal of Vacuum …, 2001 - pubs.aip.org
Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures
were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance …
were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance …
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
High field electron and hole transport in wurtzite phase GaN is studied using an ensemble
Monte Carlo method. The model includes the details of the full band structure derived from …
Monte Carlo method. The model includes the details of the full band structure derived from …