6,225, 168 B1 5, 2001 Gardner et al. 6,265,258 B1 7/2001 Liang et al. 6,291,282 B1 9, 2001
Wilk et al. 6,335,240 B1 1/2002 Kim et al. 6,368,954 B1 4/2002 Lopatin et al. 6,373,111 B1 …

(List continued on next page.) of the device. The ALD process for forming the barrier layer is
performed essentially in the absence of plasma and reactive hydrogen radials and ions. This …

US7122414B2 - Method to fabricate dual metal CMOS devices - Google Patents US7122414B2
- Method to fabricate dual metal CMOS devices - Google Patents Method to fabricate dual metal …

(57) ABSTRACT A process for producing metal nitride thin films comprising do** the metal
nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination …

Methods for forming metal silicate films are provided. The methods comprise contacting a
Substrate with alternating and sequential vapor phase pulses of a silicon Source chemical …

Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced
atomic layer deposition (PEALD) are provided, along with related compositions and …

The present disclosure relates to the deposition of conductive titanium oxide films by atomic
layer deposition processes. Amorphous doped titanium oxide films are deposited by ALD …

A method of manufacturing a high performance MOS device and transistor gate Stacks
comprises forming a gate dielectric layer over a Semiconductor Substrate; forming a barrier …

US7045406B2 - Method of forming an electrode with adjusted work function - Google Patents
US7045406B2 - Method of forming an electrode with adjusted work function - Google Patents …

Memory and logic devices are typically provided as internal, semiconductor, integrated
circuits in computers and many other electronic devices including handheld devices Such as …