The strikingly contrasting optical properties of various phases of chalcogenide phase
change materials (PCM) has recently led to the development of novel photonic devices such …

Phase‐change memory (PCM) is a promising candidate for neuro‐inspired, data‐intensive
artificial intelligence applications, which relies on the physical attributes of PCM materials …

UV pulsed laser deposition was employed for the fabrication of amorphous (GeTe) x
(Sb2Te3) 1− x,(x= 1, 0.66, 0.5, 0.33, and 0) thin films. The local structure of as-deposited …

Abstract Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …

Despite their importance in applications such as nonvolatile memory, integrated photonics,
and compact optics, the crystalline‐to‐amorphous transition in chalcogenide phase‐change …

Ge2Sb2Te5 (GST) is an important phase‐change material used in optical and electronic
memory devices. In this work, crystal growth of GST at 600 K is investigated by ab initio …

The relationship between the polycrystalline nature of phase change materials (such as Ge
2 Sb 2 Te 5) and the intermediate resistance states of phase change memory (PCM) devices …

Dynamic infrared thermal camouflage technology has attracted extensive attention due to its
ability to thermally conceal targets in various environmental backgrounds by tuning thermal …

Ge 2 Sb 2 Te 5 (GST) is well known for its phase change properties and applications in
memory and data storage. Efforts are being made to improve its thermal stability and …

G e 2 S b 2 T e 5 polycrystalline films either in the trigonal stable phase or in the metastable
rock-salt structure have been irradiated with 150 keV Ar+ ions. The effects of disorder are …