Atomic layer deposition of ZnO: a review

T Tynell, M Karppinen - Semiconductor Science and Technology, 2014 - iopscience.iop.org
Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more
and more interest in the last 20 years as a potential material for applications such as thin-film …

Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development

J Sheng, JH Lee, WH Choi, TH Hong, MJ Kim… - Journal of Vacuum …, 2018 - pubs.aip.org
This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

A review of atomic layer deposition modelling and simulation methodologies: Density functional theory and molecular dynamics

D Sibanda, ST Oyinbo, TC Jen - Nanotechnology Reviews, 2022 - degruyter.com
The use of computational modelling and simulation methodologies has grown in recent
years as researchers try to understand the atomic layer deposition (ALD) process and create …

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

N Biyikli, A Haider - Semiconductor Science and Technology, 2017 - iopscience.iop.org
In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

Influence of thermal treatment and Fe do** on ZnO films by ultrasonic spray pyrolysis

MP Gonullu, DD Cakil, C Cetinkaya - Thin Solid Films, 2024 - Elsevier
Abstract Zinc Oxide and Fe-doped ZnO films (1, 2, 3%) were deposited onto glass substrates
by ultrasonic spray pyrolysis. Then, the films were thermally treated at 500° C for 2 h …

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory …

AR Choi, DH Lim, SY Shin, HJ Kang, D Kim… - Chemistry of …, 2024 - ACS Publications
Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

[HTML][HTML] Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

J Pilz, A Perrotta, P Christian, M Tazreiter… - Journal of Vacuum …, 2018 - pubs.aip.org
The ability to grow inorganic thin films with highly controllable structural and optical
properties at low substrate temperature enables the manufacturing of functional devices on …

From precursor chemistry to gas sensors: Plasma‐enhanced atomic layer deposition process engineering for zinc oxide layers from a nonpyrophoric zinc precursor for …

L Mai, F Mitschker, C Bock, A Niesen, E Ciftyurek… - Small, 2020 - Wiley Online Library
Abstract The identification of bis‐3‐(N, N‐dimethylamino) propyl zinc ([Zn (DMP) 2], BDMPZ)
as a safe and potential alternative to the highly pyrophoric diethyl zinc (DEZ) as atomic layer …

Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach

A Afshar, KC Cadien - Applied Physics Letters, 2013 - pubs.aip.org
Atomic layer deposition of zinc oxide (ZnO) using diethylzinc (DEZ) and water is studied
using density functional theory. The reaction pathways between the precursors and ZnO …

Embedded metal oxide plasmonics using local plasma oxidation of AZO for planar metasurfaces

K Sun, W **ao, S Ye, N Kalfagiannis… - Advanced …, 2020 - Wiley Online Library
New methods for achieving high‐quality conducting oxide metasurfaces are of great
importance for a range of emerging applications from infrared thermal control coatings to …