Quantum dots photonic devices based on the III–V compound semiconductor technology
offer low power consumption, temperature stability and high-speed modulation. We …

We successfully fabricated defect-free, distributed and sub-20-nm GaAs quantum dots
(named GaAs nanodisks (NDs)) by using a novel top-down technique that combines a new …

We have investigated a new process for fabricating GaAs sub-20 nm nanopillars that uses a
top–down combination of a bio-template and damage-free neutral beam etching. A two …

We have fabricated GaAs nanodisk (ND) structures by using a combination of neutral beam
etching process and atomic hydrogen-assisted molecular beam epitaxy regrowth. We have …

Nanometric-width GaAs grating lines showing high aspect (height/width) ratio of up to 30,
without roughness or shape deviation are reported. They were obtained by HVPE …

GaAs quantum nanodisks (QNDs) in nanopillar (NP) arrays are considered to be an
attractive candidate for photonic device applications. We report a damageless fabrication …

The III–V compound semiconductor quantum dot (QD) photonic devices have attracted
considerable attention due to their stable operation at high temperature, low threshold …

Should explanation be needed, the materials fabrica tion process known as biotemplating is
a means of fashioning a functional material from a template of one of those baffling, ordered …

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation
in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well …

We demonstrated that the lattice-matched GaAs quantum nanodisks (QNDs) embedded in
an AlGaAs matrix were fabricated by our original top-down nanoprocess. Lattice-matched …