Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Group IV direct band gap photonics: methods, challenges, and opportunities
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
On-chip light sources for silicon photonics
Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …
indispensable component of silicon photonic technologies and has long been pursued …
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge (Sn) materials for micro-and nanophotonics
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0. 92Sn0.
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn …
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy… - Applied Physics …, 2017 - pubs.aip.org
GeSn alloys are the subject of intense research activities as these group IV semiconductors
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes …
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic
integration with other optical components of the photonic circuits because of the planar …
integration with other optical components of the photonic circuits because of the planar …
Design and modeling of high-performance DBR-based resonant-cavity-enhanced GeSn photodetector for fiber-optic telecommunication networks
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
Recent advances in germanium emission
The optical properties of germanium can be tailored by combining strain engineering and n-
type do**. In this paper, we review the recent progress that has been reported in the study …
type do**. In this paper, we review the recent progress that has been reported in the study …