Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible
optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult …

This work presents a systematic study of stress and strain of Al x Ga1− x N/AlN with
composition ranging from GaN to AlN, grown on ac-plane sapphire by metal-organic …

Cyclic voltammetry measurements are carried out in neutral phosphate-buffered electrolyte
using n-type Ga-polar GaN thin-film photoelectrodes with and without cobalt phosphate (Co …

Strain engineering as one of the most powerful techniques for tuning optical and electronic
properties of Ill-nitrides requires reliable methods for strain investigation. In this work, we …

Using advanced two-photon excitation confocal microscopy, associated with time-resolved
spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod …

Deep-ultraviolet emitting structures based on Al 0.65 Ga 0.35 N/Al 0.8 Ga 0.2 N multiple
quantum wells (MQWs), embedded in compositionally graded Al x Ga 1-x N films in the form …

We experimentally demonstrate that the conductivity of graded Al x Ga1–x N increases as a
function of the magnitude of the Al concentration gradient (% Al/nm) due to polarization …

A series of samples with their AlGaN layers of decreasing Al contents along the c-axis are
grown on GaN templates with molecular beam epitaxy for producing polarization-induced p …

Plastic strain relaxation in epitaxial layers is one of the crucial factors that limits the
performance of III-nitride-based heterostructures. In this work, we report on strain relaxation …

Dependence of strain distribution on Mg concentration in Mg x Zn 1-x O layers on a-plane
sapphire substrate grown by plasma-assisted molecular beam epitaxy was examined …