Perspective: Toward efficient GaN-based red light emitting diodes using europium do**
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
Y Fujiwara, V Dierolf - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
We have succeeded in growing Eu-doped GaN (GaN: Eu) layers with high crystalline quality
by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current …
by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current …
Crystal-field analysis and models of Eu-emission centers with C3v symmetry in in situ Eu-and Mg-codo** GaN layers
M Yamaga, KP O'Donnell, H Sekiguchi… - Journal of …, 2023 - Elsevier
Gallium nitride active layers co-doped in situ with magnesium and europium, GaN (Mg): Eu,
show strong red photoluminescence (PL), promising for red light emitting diode (LED) …
show strong red photoluminescence (PL), promising for red light emitting diode (LED) …
Charge state of vacancy defects in Eu-doped GaN
Eu ions have been doped into GaN in order to achieve red luminescence under current
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …
injection, where coupling between the Eu ions and intrinsic defects such as vacancies are …
Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu
M Yamaga, AK Singh, D Cameron, PR Edwards… - Journal of …, 2024 - Elsevier
Gallium nitride co-doped with magnesium and europium shows great potential for active
layers in red light emitting diode structures due to strong and sharp luminescence emission …
layers in red light emitting diode structures due to strong and sharp luminescence emission …
[HTML][HTML] Luminescence of Eu3+ in GaN (Mg, Eu): Transitions from the 5D1 level
Eu-doped GaN (Mg) exemplifies hysteretic photochromic switching between two
configurations, Eu0 and Eu1 (Mg), of the same photoluminescent defect. Using the above …
configurations, Eu0 and Eu1 (Mg), of the same photoluminescent defect. Using the above …
Thermodynamics and Kinetics of Three Complexes in Mg:GaN from Combined First-Principles Calculation and Experiment
An understanding of the formation and dissociation process of Mg-H defects in GaN is of
paramount importance for high efficient GaN-based solid-state lighting. Through a …
paramount importance for high efficient GaN-based solid-state lighting. Through a …
Optical sites in Eu-and Mg-codoped GaN grown by NH3-source molecular beam epitaxy
H Sekiguchi, M Sakai, T Kamada, H Tateishi… - Applied Physics …, 2016 - pubs.aip.org
Mg codo** can improve the luminescence properties of Eu-doped GaN. However, the
enhanced optical sites differ depending on the fabrication method. In this study, the optical …
enhanced optical sites differ depending on the fabrication method. In this study, the optical …
Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
Although p-type activation of GaN by Mg underpins a mature commercial technology, the
nature of the Mg acceptor in GaN is still controversial. Here, we use implanted Eu as a …
nature of the Mg acceptor in GaN is still controversial. Here, we use implanted Eu as a …
Study of Defects in GaN In Situ Doped with Eu3+ Ion Grown by OMVPE
J Wang, A Koizumi, Y Fujiwara… - Journal of Electronic …, 2016 - Springer
In this work, GaN epilayer in situ doped with Eu 3+ ions was deposited on the top of an
undoped n-GaN/LT-GaN/sapphire structure by organometallic vapor-phase epitaxy. A set of …
undoped n-GaN/LT-GaN/sapphire structure by organometallic vapor-phase epitaxy. A set of …