Transparent perovskite barium stannate with high electron mobility and thermal stability
WJ Lee, HJ Kim, J Kang, DH Jang… - Annual Review of …, 2017 - annualreviews.org
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have
become necessary materials for a variety of applications in the information and energy …
become necessary materials for a variety of applications in the information and energy …
Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
Perovskite oxides are ABO3‐type compounds with a crystal structure capable of
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate
(Ba, La) SnO 3 is a wide bandgap semiconducting perovskite oxide with high electron
mobility and excellent oxygen stability. The carrier modulation of (Ba, La) SnO 3 channel by …
mobility and excellent oxygen stability. The carrier modulation of (Ba, La) SnO 3 channel by …
Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material
The high room-temperature mobility that can be achieved in BaSnO3 has created significant
excitement for its use as channel material in all-perovskite-based transistor devices such as …
excitement for its use as channel material in all-perovskite-based transistor devices such as …
Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial
The wide gap perovskite semiconductor BaSnO 3 has attracted much interest since the
discovery of room temperature electron mobility up to 320 cm 2 V− 1 s− 1 in bulk crystals …
discovery of room temperature electron mobility up to 320 cm 2 V− 1 s− 1 in bulk crystals …
[HTML][HTML] High-k perovskite gate oxide BaHfO3
We have investigated epitaxial BaHfO 3 as a high-k perovskite dielectric. From x-ray
diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and …
diffraction measurement, we confirmed the epitaxial growth of BaHfO 3 on BaSnO 3 and …
Interface energy band alignment at the all-transparent pn heterojunction based on NiO and BaSnO3
J Zhang, S Han, W Luo, S **ang, J Zou… - Applied Physics …, 2018 - pubs.aip.org
Transparent oxide semiconductors hold great promise for many optoelectronic devices such
as transparent electronics, UV-emitting devices, and photodetectors. A pn heterojunction is …
as transparent electronics, UV-emitting devices, and photodetectors. A pn heterojunction is …
Enhanced electron mobility at the two-dimensional metallic surface of BaSnO3 electric-double-layer transistor at low temperatures
Wide-bandgap oxides exhibiting high electron mobility hold promise for the development of
useful electronic and optoelectronic devices as well as for basic research on two …
useful electronic and optoelectronic devices as well as for basic research on two …
Transparent p-CuI/n-BaSnO3− δ heterojunctions with a high rectification ratio
Abstract Transparent p-CuI/n-BaSnO 3− δ heterojunction diodes were successfully
fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an …
fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an …
[HTML][HTML] Epitaxial films and devices of transparent conducting oxides: La: BaSnO3
This paper reviews recent developments in materials science and device physics of high-
quality epitaxial films of the transparent perovskite La-doped barium stannate, La: BaSnO 3 …
quality epitaxial films of the transparent perovskite La-doped barium stannate, La: BaSnO 3 …