The scaling of metal oxide semiconductor field effect transistors (MOSFETs) for data storing
and logic circuit operation has reached a critical point, beyond which further scaling poses …

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular
interest for magnetic random-access memories because of their excellent thermal stability …

The electronic structure and magnetism of a new type of half-Heusler alloy, ie, double half-
Heusler (DHH) alloy Mn 2 FeCoSi 2 are investigated. Our calculations reveal that Mn 2 …

We report a first-principles study of electronic structures, magnetic properties, and the
tunneling-magnetoresistance (TMR) effect of a series of ferromagnetic nitride M 4 N (M= Fe …

Recently magnetic tunnel junctions using two-dimensional MoS2 as nonmagnetic spacer
have been fabricated, although their magnetoresistance has been reported to be quite low …

We propose and theoretically investigate a class of stable zigzag graphene nanoribbon
(ZGNR) based molecular magnetic tunneling junctions (MTJs). For those junctions having …

It has been reported in experiments that cap** layers, which enhance the perpendicular
magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs), induce a great impact on …

We report the investigation on the ferroelectricity and tunneling electroresistance (TER)
effect in PbTiO 3 (PTO)-based ferroelectric tunnel junctions (FTJs) using first-principles …

Equiatomic quaternary Heusler compounds (EQHCs) generally have the advantages of high
Curie temperature, large spin polarization and long spin diffusion length, and they are …

MnAl, as a prospective candidate of magnetic electrode materials for MgO-based magnetic
tunnel junctions, possesses several advantages including the spin polarized Δ 1 band …