A review of capabilities and scope for hybrid integration offered by silicon-nitride-based photonic integrated circuits

F Gardes, A Shooa, G De Paoli, I Skandalos, S Ilie… - Sensors, 2022 - mdpi.com
In this review we present some of the recent advances in the field of silicon nitride photonic
integrated circuits. The review focuses on the material deposition techniques currently …

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

TK Ng, JA Holguin-Lerma, CH Kang… - Journal of Physics D …, 2021 - iopscience.iop.org
Group-III-nitride optical devices are conventionally important for displays and solid-state
lighting, and recently have garnered much interest in the field of visible-light communication …

On-chip integration of III-nitride flip-chip light-emitting diodes with photodetectors

J Li, J Wu, L Chen, X An, J Yin, Y Wu, L Zhu… - Journal of Lightwave …, 2021 - opg.optica.org
The fabrication of GaN light-emitting diodes (LEDs) with on-chip photodetectors (PDs) based
on flip-chip configuration is reported. The exposed sapphire plays a key role not only in light …

Integrated structured light manipulation

J Wang, K Li, Z Quan - Photonics Insights, 2024 - spiedigitallibrary.org
Structured light, also known as tailored light, shaped light, sculpted light, or custom light,
refers to a series of special light beams with spatially variant amplitudes and phases …

Monolithic integration of laser onto multilayer silicon nitride photonic integrated circuits with high efficiency at telecom wavelength

Y Yang, H Zhao, X Ren, Y Huang - Optics Express, 2021 - opg.optica.org
We propose a multilayer silicon nitride (SiN)-on-silicon photonic integrated circuit (PIC)
platform with a monolithic laser at the C-band. A tapered edge coupler and a meta-structure …

Analysis of InGaN-delta-InN quantum wells on InGaN substrates for red light emitting diodes and lasers

B Melanson, C Liu, J Zhang - IEEE Photonics Journal, 2021 - ieeexplore.ieee.org
Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror
laser projectors often require the use of both III-V and III-Nitride material systems for different …

Heterogeneous sapphire-supported low-loss photonic platform

Y Wang, Y Guo, Y Zhou, H **e, HX Tang - Optics Express, 2024 - opg.optica.org
Sapphire is a promising wideband substrate material for visible photonics. It is a common
growth substrate for III-nitride light-emitting diodes and laser structures. Doped sapphires …

Low-loss and broadband cascaded SiN RGB coupler with dual-mode interference

XL Hu, JK Jiang, WJ Liu - Applied Optics, 2023 - opg.optica.org
We design and demonstrate a cascaded SiN-based RGB coupler with dual-mode
interference (DMI) for a micro laser scanning image projector. The DMI configuration in SiN …

On-Chip Lasers for Silicon Photonics

J Zhang, AG Shankar, X Wang - Photonics, 2024 - mdpi.com
With the growing trend in the information industry, silicon photonics technology has been
explored in both academia and industry and utilized for high-bandwidth data transmission …

Monolithic integration of blue light sources into silicon nitride photonic chips

IA Pshenichnyuk, M Farooq, DS Zemtsov… - arxiv preprint arxiv …, 2024 - arxiv.org
We investigate theoretically photonic chips with monolithically integrated blue light sources.
According to our evaluations, a group-III nitride light emitting heterostructure can be …