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Nanoscale Electron Transfer Variations at Electrocatalyst–Electrolyte Interfaces Resolved by in Situ Conductive Atomic Force Microscopy
Rational innovation of electrocatalysts requires detailed knowledge of spatial property
variations across the solid–electrolyte interface. We introduce correlative atomic force …
variations across the solid–electrolyte interface. We introduce correlative atomic force …
Metallic Twin Grain Boundaries Embedded in MoSe2 Monolayers Grown by Molecular Beam Epitaxy
Twin grain boundaries in MoSe2 are metallic and undergo a metal to insulator Peierls
transition at low temperature. Growth of MoSe2 by molecular beam epitaxy results in the …
transition at low temperature. Growth of MoSe2 by molecular beam epitaxy results in the …
Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy
Monolayer molybdenum disulfide (MoS2) has received intense interest as a strong
candidate for next-generation electronics. However, the observed electrical properties of …
candidate for next-generation electronics. However, the observed electrical properties of …
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films
This study investigates the resistive switching characteristics and underlying mechanism in
2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force …
2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force …
Dielectric breakdown in chemical vapor deposited hexagonal boron nitride
Insulating films are essential in multiple electronic devices because they can provide
essential functionalities, such as capacitance effects and electrical fields. Two-dimensional …
essential functionalities, such as capacitance effects and electrical fields. Two-dimensional …
[HTML][HTML] Memristor compact model with oxygen vacancy concentrations as state variables
We present a unique compact model for oxide memristors based upon the concentration of
oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen …
oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen …
Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments
We present the resistive switching characteristics of Metal‐Insulator‐Metal (MIM) devices
based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A …
based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A …
Random telegraph noise in 2D hexagonal boron nitride dielectric films
This study reports the observation of low frequency random telegraph noise (RTN) in a 2D
layered hexagonal boron nitride dielectric film in the pre-and post-soft breakdown phases …
layered hexagonal boron nitride dielectric film in the pre-and post-soft breakdown phases …
Random telegraph noise: Measurement, data analysis, and interpretation
In this paper, we delve into one of the most relevant defects-related phenomena causing
failures in the operation of modern nanoscale electron devices, namely Random Telegraph …
failures in the operation of modern nanoscale electron devices, namely Random Telegraph …
Localized probing of dielectric breakdown in multilayer hexagonal boron nitride
Hexagonal boron nitride (h-BN) has emerged as a promising 2D/layered dielectric owing to
its successful integration with graphene and other 2D materials, although a coherent picture …
its successful integration with graphene and other 2D materials, although a coherent picture …