Despite an extensive research effort for over 60 years, an understanding of the origins of
conductivity in wide band gap transparent conducting oxide (TCO) semiconductors remains …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Since a few years, indium nitride promising properties for device applications have attracted
much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth …

InN has emerged as a highly promising material for a number of technological applications,
but progress is still hampered by lack of control over its conductivity. The material exhibits a …

The origin of high background electron concentration (n) in In x Ga 1− x N alloys has been
investigated. A shallow donor was identified as having an energy level (ED 1) that …

The irradiation of InN and In x Ga1–x N samples with low-energy H ions results in
exceptionally high hydrogen uptake in a crystalline semiconductor. This phenomenon is …

A three-region model for the high n-type conductivity in InN, including contributions from the
bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel …

Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically
the electronic and structural properties of the crystal through the creation of nitrogen …

This work presents a study of the correlation between the electrical properties and the
structural defects in nominally undoped InN films. It is found that the density of edge-type …

We study the surface charge accumulation on InN thin films that strongly effects mobility of
charge carriers. The films are formed by MBE in the temperature range (400–470 C) yielding …