Plasma etching is an essential semiconductor manufacturing technology required to enable
the current microelectronics industry. Along with lithographic patterning, thin-film formation …

An atomistic understanding of dry-etching processes with reactive molecules is crucial for
achieving geometric integrity in highly scaled semiconductor devices. Molecular dynamics …

Etching of high aspect ratio features into alternating SiO 2 and SiN layers is an enabling
technology for the manufacturing of 3D NAND flash memories. In this paper, we study a low …

Isotropic gas-phase etching of SiO 2 was examined using HF and methanol vapor while
changing the pressure from 300 to 900 Pa. The temperature dependence of the etching rate …

This study investigated the effect of temperature on the aspect-ratio etching of SiO2 in
CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature …

Computational modeling of plasma etching processes at the feature scale relevant to the
fabrication of nanometer semiconductor devices is critically dependent on the reaction …

Abstract High aspect ratio SiO 2/SiN (ON) stacked layer etching using hydrofluorocarbon
gases was conducted with various ratios of H, F, and C to achieve higher etching rates and …

High Aspect Ratio Contact (HARC) hole etch is one of the most challenging processes that
require many efforts to optimize etch condition. As the aspect ratio increases, novel issues …

By imaging a capacitively coupled plasma from multiple directions using telecentric lens
cameras and optical bandpass filters, the spatial structure of emission at specific …

To continuously increase storage density, an asymmetrical 3D NAND memory architecture
has recently been proposed that eliminates the need for dummy memory holes during the …