The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+ Monetite: PVC) interface layer

M Ulusoy, Ş Altındal, Y Azizian-Kalandaragh… - Microelectronic …, 2022 - Elsevier
In this research work, by using biocompatible minerals as an additive, the electrical
response of the structure was measured, and its convenience in passivating N ss was …

Substrate heat-assisted spray pyrolysis of crack-free ytterbium sesquioxide-Si heterojunction diodes for photo-sensing applications

KS Mohan, R Marnadu, Y Shin, KV Gunavathy… - Surfaces and …, 2023 - Elsevier
A simple spray pyrolysis is used to develop ytterbium sesquioxide (Yb 2 O 3) on
aluminoborosilicate glass substrates at variable substrate temperatures. A cubic crystal …

The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode

AG Al-Sehemi, A Tataroğlu, A Dere, A Karabulut… - Journal of Materials …, 2023 - Springer
Abstract The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …

[HTML][HTML] Comprehensive study of interface state via the time-dependent second harmonic generation

L Zhang, L Ye, W Zhao, C Huang, T Li, T Min… - Journal of Applied …, 2024 - pubs.aip.org
Electric field induced time-dependent second harmonic generation (TD-SHG) is an
emerging sensitive and non-contact method for qualitatively/quantitatively probing …

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

M Yılmaz, F Yıldırım, Ş Aydoğan… - Journal of Physics D …, 2023 - iopscience.iop.org
ZnO flake interlayers were fabricated by the electrochemical deposition technique on p-Si to
obtain Au/ZnO/p-Si heterostructures for Schottky-type photodiode applications and to test the …

The physical parameters of MOS structures in the presence of local mechanical stress

W Rzodkiewicz, K Roman - Measurement, 2024 - Elsevier
The development research of metal oxide semiconductors (MOS) nanomaterials provides to
produce electronic modules of fast response, low manufacture cost, long work life, and …

Conductance-capacitance and voltage behavior of 1% Os-doped YMnO3/p-Si contacts under varying frequencies

FM Coşkun - Journal of Materials Science: Materials in Electronics, 2022 - Springer
The admittance characterizations of the ferroelectric Perovskite Materials 1% Osmium (Os)-
doped YMnO3 and p-Si contacts were conducted by capacitance–voltage (C–V) and …

Electrical Performance Determination and Stress Reliability Estimation of ALD-Derived ErO/InP Heterointerface

L Qiao, G He, S Jiang, Y Liu, J Lu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
High-quality gate dielectric layers and high-grade interfaces between high-films and
substrates are essential to achieve favorable performance and electrical stability of metal …

[PDF][PDF] Frequency Dependent Electrical Characteristics of Al/SiO2/SiNWs/n-Si MOS Capacitors

A Mutale, E Yilmaz - RAP Conf. Proc, 2021 - rap-proceedings.org
In this work, the frequency dependent electrical characteristics of Al/SiO2/SiNWs/n-Si MOS
capacitors were investigated. The electrical properties of the capacitors were calculated from …

Simulation and comparison of capacitance voltage characteristics in copper (II) oxide and silicon dioxide-based MOS capacitor

D Subhasree, R Yuvaraj - AIP Conference Proceedings, 2023 - pubs.aip.org
The aim of the work is to simulate and analyze the capacitance-voltage characteristics of the
copper (II) oxide (CuO) based novel MOS capacitor (Ag/CuO/Si) compared with Silicon …