A semiconductor device capable of high speed operation is provided. Further, a
semiconductor device in which change in electric characteristics due to a short channel …

A semiconductor device capable of high speed operation is provided. Further, a
semiconductor device in which change in electric characteristics due to a short channel …

(57) ABSTRACT A highly reliable semiconductor device including an oxide semiconductor is
provided by preventing a change in its electrical characteristics. A semiconductor device …

(57) ABSTRACT A semiconductor device that occupies a small area and has a high degree
of integration is provided. The semiconductor device includes a first insulating layer, a …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semiconduc tor …

Oxygen defects formed at the boundary between the zinc oxide type oxide semiconductor
and the gate insulator are terminated by a surface treatment using Sulfur or selenium as an …

US8363452B2 - Semiconductor device - Google Patents US8363452B2 - Semiconductor
device - Google Patents Semiconductor device Download PDF Info Publication number …

Disclosed is a semiconductor device capable of functioning as a memory device. The
memory device comprises a plurality of memory cells, and each of the memory cells contains …

The reliability of a transistor including an oxide semicon ductor can be improved by
suppressing a change in electrical characteristics. A transistor included in a semiconductor …

An object is to provide a memory device including a memory element that can be operated
without problems by a thin film transistor with a low off-state current. Provided is a memory …