Trapped protons and electrons in the Earth's radiation belts and cosmic rays present
significant challenges for electronics that must operate reliably in the natural space …

This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

The ABCD3TA is a 128-channel ASIC with binary architecture for the readout of silicon strip
particle detectors in the Semiconductor Tracker of the ATLAS experiment at the Large …

This book provides a detailed treatment of radiation effects in electronic devices, including
effects at the material, device, and circuit levels. The emphasis is on transient effects caused …

The development of the investigation of total dose effects in bipolar devices and circuits is
covered over the past 40 years. There are at least four chronological stages in this field of …

Total-dose radiation hardness assurance is reviewed for MOS and bipolar devices and
integrated circuits (ICs), with an emphasis on issues addressed by recent revisions to …

P-type MOS capacitors fabricated in two bipolar processes were examined for ionizing
radiation-induced threshold voltage shifts as a function of total dose, dose rate, temperature …