GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Catalytically reducing CO2 offers an effective way to produce energy-rich fuels and high-
value chemicals while simultaneously sequestrating CO2 from the environment. However …

The perovskite manganites with generic formula RE 1− x AE x MnO 3 (RE= rare earth, AE=
Ca, Sr, Ba and Pb) have drawn considerable attention, especially following the discovery of …

In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …

The electronic, magnetism, and optical absorption behaviors of transition metals adsorbed g-
GaN systems were investigated by employing density functional theory based on first …

The structure and magnetic properties of Co-doped ZnO films are discussed in relation to
cobalt do** levels and growth conditions. Films were deposited by pulsed-laser …