Recent progress in van der Waals heterojunctions

W **a, L Dai, P Yu, X Tong, W Song, G Zhang, Z Wang - Nanoscale, 2017 - pubs.rsc.org
Following the development of many novel two-dimensional (2D) materials, investigations of
van der Waals heterojunctions (vdWHs) have attracted significant attention due to their …

Impact of moiré superlattice on atomic stress and thermal transport in van der Waals heterostructures

W Ren, S Lu, C Yu, J He, Z Zhang, J Chen… - Applied Physics …, 2023 - pubs.aip.org
Moiré superlattices and their interlayer interactions in van der Waals heterostructures have
received surging attention for manipulating the properties of quantum materials. In this work …

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures

D Pierucci, H Henck, J Avila, A Balan, CH Naylor… - Nano …, 2016 - ACS Publications
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic
devices due to its high photosensitivity, which is the result of its indirect to direct band gap …

Electronic band structure of Two-Dimensional /Graphene van der Waals Heterostructures

H Henck, Z Ben Aziza, D Pierucci, F Laourine, F Reale… - Physical Review B, 2018 - APS
Combining single-layer two-dimensional semiconducting transition-metal dichalcogenides
(TMDs) with a graphene layer in van der Waals heterostructures offers an intriguing means …

[HTML][HTML] A review on carrier mobilities of epitaxial graphene on silicon carbide

W Norimatsu - Materials, 2023 - mdpi.com
Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …

van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties

Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier… - ACS …, 2016 - ACS Publications
Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like
the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are …

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

RJP Román, FJRC Costa, A Zobelli, C Elias… - 2D …, 2021 - iopscience.iop.org
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great
potential for technological applications like efficient deep ultraviolet light sources, building …

A novel visible light active rare earth doped CdS nanoparticles decorated reduced graphene oxide sheets for the degradation of cationic dye from wastewater

P Devendran, D Selvakumar, G Ramadoss… - Chemosphere, 2022 - Elsevier
A variety of rare earth metals (La, Sm, Nd, Ce, Gd) doped cadmium sulfide (RE-CdS) grafted
reduced graphene oxide (G) sheet nanocomposites estimated imperative attention due to …

Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy

X Li, S Sundaram, Y El Gmili, T Ayari… - Crystal Growth & …, 2016 - ACS Publications
This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on
sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and …

[HTML][HTML] Preparation of highly thermally conductive and electrically insulating PI/BNNSs nanocomposites by hot-pressing self-assembled PI/BNNSs microspheres

L Cao, J Wang, J Dong, X Zhao, HB Li… - Composites Part B …, 2020 - Elsevier
Traditional polymer-based thermally conductive composites with randomly distributed fillers
always yield an undesired heat removal due to the lack of efficient heat transfer pathways …