To overcome a bottleneck in spintronic applications such as those of ultralow-power
magnetoresistive random-access memory devices, the electric-field control of magnetization …

Efficient manipulation of spin waves (SWs) is considered as one of the promising means for
encoding information with low power consumption in next-generation spintronic devices …

For the development of spintronic devices, the control of magnetization by a low electric field
is necessary. The microscopic origin of manipulating spins relies on the control of orbital …

Multiferroic heterostructures consisting of Co/Pd multilayers on Pb (Mg 1/3 Nb 2/3) O 3-
PbTiO 3 (011) substrates are experimentally investigated. The converse magnetoelectric …

First-principles calculations incorporating spin-orbit coupling are presented for a multiferroic
material as a ferromagnetic/ferroelectric junction. We simulate the interface effect that cannot …

To develop voltage‐controlled magnetization switching technologies for spintronics
applications, a highly (422)‐oriented Co2FeSi layer on top of the piezoelectric PMN‐PT …

We investigate the magnetic properties of an epitaxial full-Heusler Co 2 Fe Si film with an
atomically controlled multiferroic interface coupled with a Ba Ti O 3 substrate. The real …

Using a molecular beam epitaxy technique, we experimentally demonstrate a multiferroic
heterostructure consisting of metastable ferromagnetic Co 3 Mn on piezoelectric Pb (Mg 1/3 …

Co 2 FeSi (CFS) alloy film is one of promising ferromagnetic electrodes and MgAl 2 O 4
(MAO) spinel is an attractive oxide barrier. In this work, we fabricate a series of …

A series of Co2FeSi (CFS) films sandwiched by MgO and Pt layers are sputtered. For the as-
deposited films, the magnetic easy axis lies in the sample plane. After annealing …