Diffusion of dopants and impurities in β-Ga2O3
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …
High-performance β-Ga2O3 solar-blind ultraviolet photodetectors epitaxially grown on (110) TiO2 substrates by metalorganic chemical vapor deposition
Y Ma, B Feng, X Zhang, T Chen, W Tang, L Zhang… - Vacuum, 2021 - Elsevier
Abstract High-quality (100)-oriented β-Ga 2 O 3 films were successfully grown on (110) TiO
2 substrates by metalorganic chemical vapor deposition (MOCVD) for the first time. Crystal …
2 substrates by metalorganic chemical vapor deposition (MOCVD) for the first time. Crystal …
High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant
W Tang, Y Ma, X Zhang, X Zhou, L Zhang… - Applied Physics …, 2022 - pubs.aip.org
(001) β-Ga 2 O 3 homoepitaxy on commercially available large-size (001) β-Ga 2 O 3
substrates remains a significant challenge for the wide bandgap semiconductor community …
substrates remains a significant challenge for the wide bandgap semiconductor community …
First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga2O3
This study uses density functional theory calculations to explore the energetics and
electronic structures of planar defects in monoclinic β‐Ga2O3, including twin boundaries …
electronic structures of planar defects in monoclinic β‐Ga2O3, including twin boundaries …
[HTML][HTML] Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy
A Karg, A Hinz, S Figge, M Schowalter, P Vogt… - APL Materials, 2023 - pubs.aip.org
The influence of In on the growth of ɛ-Ga 2 O 3 by plasma-assisted molecular beam epitaxy
is investigated. We demonstrate alloying of ɛ-Ga 2 O 3 with In and describe its incorporation …
is investigated. We demonstrate alloying of ɛ-Ga 2 O 3 with In and describe its incorporation …
Epitaxial stabilization of rutile germanium oxide thin film by molecular beam epitaxy
Ultrawide bandgap (UWBG) semiconductors (E g> 3 eV) have tremendous potential for
power-electronic applications. The current state-of-the-art UWBG materials such as β-Ga 2 O …
power-electronic applications. The current state-of-the-art UWBG materials such as β-Ga 2 O …
Tunable electronic and optical properties of ferroelectric WS2/Ga2O3 heterostructures
D Wei, Y Li, G Guo, H Yu, Y Ma, Y Tang… - Journal of Physics …, 2023 - iopscience.iop.org
To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is
regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong …
regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong …
Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy
We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide
molecular-beam epitaxy (S-MBE). By supplying the molecular catalysts In 2 O and SnO we …
molecular-beam epitaxy (S-MBE). By supplying the molecular catalysts In 2 O and SnO we …
Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer
A Karg, M Kracht, P Vogt, A Messow, N Braud… - Journal of Applied …, 2022 - pubs.aip.org
The tin-enhanced growth of G a 2 O 3 on (0001) A l 2 O 3 by plasma-assisted molecular
beam epitaxy using an ultrathin δ-layer of Sn O 2 is demonstrated. It is shown that this …
beam epitaxy using an ultrathin δ-layer of Sn O 2 is demonstrated. It is shown that this …
Incorporation of Si and Sn donors in β-Ga2O3 through surface reconstructions
Tin and silicon incorporate on gallium sites in Ga 2 O 3 and act as shallow donors. The
monoclinic structure of Ga 2 O 3 has two inequivalent Ga sites; density functional theory …
monoclinic structure of Ga 2 O 3 has two inequivalent Ga sites; density functional theory …