Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

The desire for develo** ultraviolet optoelectronic devices has prompted extensive studies
toward wide-bandgap semiconductor ZnO and its related alloys. Bandgap engineering as …

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because
they are easily integrated with multiple mainstream semiconductor platforms. However, the …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and
is critical for the development of low-energy nanoelectronics and neuromorphic applications …

Ferroelectricity in binary oxides including hafnia and zirconia has riveted the attention of the
scientific community due to the highly unconventional physical mechanisms and the …