Certain embodiments herein relate to methods and apparatus for processing a partially
fabricated semiconductor Substrate in a remote plasma environment. The methods may be …

Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are
disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on …

Abstract Systems and methods for achieving uniformity across a redistribution layer are
described. One of the methods includes patterning a photoresist layer over a substrate. The …

Methods of forming wiring structures and methods of manufacturing semiconductor devices
include forming a lower structure on a substrate, forming an interlayer insulating film …

Certain embodiments herein relate to methods and apparatus for processing a partially
fabricated semiconductor substrate in a remote plasma environment. The methods may be …

US9613826B2 - Semiconductor process for treating metal gate - Google Patents
US9613826B2 - Semiconductor process for treating metal gate - Google Patents …

The structure includes a first substrate; a first dielectric layer having a first surface in
proximity to the first substrate and a second surface away from the first substrate; a first …

Method and apparatus for characterizing metal oxide reduc tion using metal oxide films
formed in an anneal chamber are disclosed. Oxygen is provided into an anneal chamber. A …

The present disclosure relates to an improved method of forming interconnection layers to
reduce voids and improve reliability, and an associated device. In some embodiments, a …

In view of this, an embodiment of the present invention provides a manufacturing method of
an electrode line pattern of an array substrate, an array substrate and a liquid crystal display …