Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures
The treatment of time-resolved (TR) photoluminescence (PL) decay kinetics is analysed in
details and illustrated by experiments on semiconductor quantum dots, namely silicon …
details and illustrated by experiments on semiconductor quantum dots, namely silicon …
Bright and fast scintillations of an inorganic halide perovskite CsPbBr3 crystal at cryogenic temperatures
Highly efficient scintillation crystals with short decay times are indispensable for improving
the performance of numerous detection and imaging instruments that use-X-rays, gamma …
the performance of numerous detection and imaging instruments that use-X-rays, gamma …
Near-unity internal quantum efficiency of luminescent silicon nanocrystals with ligand passivation
Spectrally resolved photoluminescence (PL) decays were measured for samples of
colloidal, ligand-passivated silicon nanocrystals. These samples have PL emission energies …
colloidal, ligand-passivated silicon nanocrystals. These samples have PL emission energies …
Revisiting an ongoing debate: What role do surface groups play in silicon nanocrystal photoluminescence?
R Sinelnikov, M Dasog, J Beamish, A Meldrum… - ACS …, 2017 - ACS Publications
The origin of photoluminescence (PL) in silicon nanocrystals (SiNCs) remains a subject of
considerable debate. Size-dependent PL that supports the quantum confinement model has …
considerable debate. Size-dependent PL that supports the quantum confinement model has …
Charge transport in Si nanocrystal/SiO2 superlattices
Size-controlled silicon nanocrystals in silicon oxynitride matrix were prepared using plasma-
enhanced chemical vapor deposition following the superlattice approach. A combination of …
enhanced chemical vapor deposition following the superlattice approach. A combination of …
Enhanced subband light emission from Si quantum dots/SiO2 multilayers via phosphorus and boron co-do**
Seeking light sources from Si-based materials with an emission wavelength meeting the
requirements of optical telecommunication is a challenge nowadays. It was found that the …
requirements of optical telecommunication is a challenge nowadays. It was found that the …
Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size
Phosphorus do** of silicon nanostructures is a non-trivial task due to problems with
confinement, self-purification and statistics of small numbers. Although P-atoms incorporated …
confinement, self-purification and statistics of small numbers. Although P-atoms incorporated …
Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals
Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily
shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical …
shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical …
Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect
Thin layers of silicon nanocrystals (SiNC) in oxide matrix with optimized parameters are
fabricated by the plasma-enhanced chemical vapor deposition. These materials with SiNC …
fabricated by the plasma-enhanced chemical vapor deposition. These materials with SiNC …
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …