Semiconductor nanowires are considered as one of the most promising candidates for next-
generation devices due to their unique quasi-one-dimensional structures and novel physical …

We review different strategies to achieve a three-dimensional energy bandgap modulation
in a nanowire (NW) by the introduction of self-assembled 0D, 1D and 2D quantum …

We report on the growth of Al x Ga 1− x N nanowires by plasma-assisted molecular beam
epitaxy for x in the 0.3–0.8 range. Based on a combination of macro-and micro …

A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells
has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution …

The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells
(MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area …

The photoluminescence (PL) response of GaN/AlGaN nanowire heterostructures (NWHs) to
hydrogen and oxygen between room temperature and 300 C is reported. Exposure of Pt …

The three-dimensional carrier confinement in GaN nanodiscs embedded in GaN/Al x Ga 1−
x N nanowires and its effect on their photoluminescence properties is analyzed for Al …

High crystalline quality, vertically aligned Al x Ga 1− x N nanowire heterostructures are
grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular …

We present a novel approach for self-assembled growth of GaN quantum wires (QWRs)
exhibiting strong confinement in two spatial dimensions. The GaN QWRs are formed by …