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Transistors based on two-dimensional materials for future integrated circuits
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric
S Li, X Liu, H Yang, H Zhu, X Fang - Nature Electronics, 2024 - nature.com
High dielectric constant (high-κ) gate dielectrics compatible with two-dimensional (2D)
semiconductors are essential for scaled optoelectronic devices. However, conventional …
semiconductors are essential for scaled optoelectronic devices. However, conventional …
High-κ perovskite membranes as insulators for two-dimensional transistors
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …
Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre
Two-dimensional semiconductors such as layered transition metal dichalcogenides can
offer superior immunity to short-channel effects compared with bulk semiconductors such as …
offer superior immunity to short-channel effects compared with bulk semiconductors such as …
Transistor engineering based on 2D materials in the post-silicon era
The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has
been the driving force behind the development of integrated circuits over the past 60 years; …
been the driving force behind the development of integrated circuits over the past 60 years; …
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
Abstract Two-dimensional (2D) structures composed of atomically thin materials with high
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
The limited memory retention for a ferroelectric field-effect transistor has prevented the
commercialization of its nonvolatile memory potential using the commercially available …
commercialization of its nonvolatile memory potential using the commercially available …
Electrical characterization of 2D materials-based field-effect transistors
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …
conventional semiconductor technologies face serious limitations in performance and power …
High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Do**
Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces
enables the implementation of high‐performance devices on form‐free substrates by cost …
enables the implementation of high‐performance devices on form‐free substrates by cost …