A compact model extending the bsim3 model for silicon carbide power mosfets

L Yan, K Sharma, I Kallfass - IEEE Transactions on Power …, 2022 - ieeexplore.ieee.org
This article presents an approach adopting and extending the industry-standard BSIM3
model with necessary extensions to build an accurate compact model for 1.2-kV silicon …

[HTML][HTML] Electrothermal model of coupled inductors with nanocrystalline cores

K Detka, K Górecki - Energies, 2021 - mdpi.com
The paper proposes a new electrothermal model of a coupled inductor containing a
nanocrystalline core dedicated to the analysis of electrical energy conversion systems. The …

An Analytical Model of the Switching Behavior of 4H-SiC p $^{\bm+} $-nn $^{\bm+} $ Diodes from Arbitrary Injection Conditions

S Bellone, FG Della Corte… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
An analytical model of the switching behavior of SiC diodes is presented. The model gives
an accurate description of the current and voltage transient for a wide range of reverse to …

Physical modelling of large area 4H-SiC PiN diodes

AT Bryant, MR Jennings… - 2009 IEEE Energy …, 2009 - ieeexplore.ieee.org
The recent developments in SiC PiN diode research mean that physics-based models that
allow accurate, rapid prediction of switching and conduction performance and resulting …

[PDF][PDF] Electrothermal model of SiC power Schottky diodes

J Zarębski, J Dąbrowski - Przegląd Elektrotechniczny, 2011 - pe.org.pl
The paper concerns the problem of modelling dc characteristics of commercial SiC power
Schottky diodes with self-heating taken into account. The electrothermal model of the …

[CITAS][C] 用于电磁干扰预评估的功率 PIN 二极管建模研究进展

张逸成, 张佳佳, 韦莉, 姚勇涛 - 同济大学学报 (自然科学版), 2015