Emerging type‐II superlattices of InAs/InAsSb and InAs/GaSb for mid‐wavelength infrared photodetectors
Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …
environmental sensing of hazardous gases, security, defense, and medical applications …
[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
Long-wave infrared InAs/InAsSb type-II superlattice nBn photodetectors are demonstrated
on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a …
on GaSb substrates. The typical device consists of a 2.2 μm thick absorber layer and has a …
Mid-infrared semiconductor lasers: a review
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …
of applications of growing importance such as photonic sensors for environment, industry or …
Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition
We report the growth and characterization of long wavelength infrared type-II InAs/InAs 1-x
Sb x superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate …
Sb x superlattice photodiodes with a 50% cut-off wavelength at 8.0 μm on a GaSb substrate …
InAsSb-based photodetectors
EH Steenbergen - Mid-infrared Optoelectronics, 2020 - Elsevier
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
Application of localization landscape theory and the k· p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system
Localization landscape (LL) theory is applied to directly model carrier transport in a type II
superlattice (T2SL) InAs/InAsSb photoconductor system. It is difficult to apply the classical …
superlattice (T2SL) InAs/InAsSb photoconductor system. It is difficult to apply the classical …
Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook
C Jia, G Deng, L Liu, P Zhao, G Song… - Journal of Physics D …, 2023 - iopscience.iop.org
Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection
system is one of the critical challenges lying ahead for the development of IR detector …
system is one of the critical challenges lying ahead for the development of IR detector …
The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors
DZ Ting, A Soibel, A Khoshakhlagh… - Infrared Technology …, 2019 - spiedigitallibrary.org
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) is an adjustable
band gap, broad-band III-V infrared detector material that has emerged in recent years as an …
band gap, broad-band III-V infrared detector material that has emerged in recent years as an …
Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer …
The energy gaps were studied in two types of structures: unrelaxed bulk InAs 1− x Sb x
layers with x= 0.2 to 0.46 grown on metamorphic buffers and type II InAs 1− x Sb x/InAs …
layers with x= 0.2 to 0.46 grown on metamorphic buffers and type II InAs 1− x Sb x/InAs …