Vertical AND-Type Flash Synaptic Cell Stack for High-Density and Reliable Binary Neural Networks

J Kim, J Im, S Oh, W Shin, G Jung… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
A vertical AND-type (V-AND) cell stack consisting of flash memory cells is proposed and
fabricated for hardware-based binary neural networks (BNNs). Low-power operation is …

3-STAR: A Super-steep switching, Stackable, and Strongly Reliable Transistor Array RAM for Sub-10nm DRAM and beyond

K Lee, S Yoo, J Hong, HC Kim, YS Kim… - 2023 International …, 2023 - ieeexplore.ieee.org
A novel capacitor-less DRAM, named 3-STAR (A Super-steep switching, Stackable, and
Strongly reliable Transistor Array RAM), is proposed, and investigated for the first time. The …

Hardware-based ternary neural network using AND-type poly-Si TFT array and its optimization guideline

D Kwon, MK Park, WM Kang, J Hwang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Thin-film transistor (TFT)-type synaptic devices with poly-Si channels have the benefits of
compatibility with the CMOS process, high reliability, and low power consumption. However …