Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
[HTML][HTML] High-temperature terahertz quantum cascade lasers
The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the
most promising radiation sources in the THz region owing to its high output power and broad …
most promising radiation sources in the THz region owing to its high output power and broad …
A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 μm) to the visible (550 nm) spectral range
We report on a GaN/AlN quantum cascade detector operating in an extended spectral range
going from the mid-infrared to visible wavelengths. This broadband detection is achieved …
going from the mid-infrared to visible wavelengths. This broadband detection is achieved …
Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon
We report repeatable AlN/GaN resonant tunneling diodes (RTDs) grown on a silicon
substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative …
substrate by plasma-assisted molecular-beam epitaxy. The RTDs exhibit stable negative …
GaN/AlN multi-quantum wells infrared detector with short-wave infrared response at room temperature
F Jiang, Y Bu - Sensors, 2022 - mdpi.com
GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based
quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 …
quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 …
Investigation of peak-to-valley current ratio of GaN/AlN resonant tunneling diodes
Peak-to-valley current ratios (PVCRs) achie-ved in GaN/AlN resonant tunneling diodes
(RTDs) are less than 2, significantly less than their counterparts, such as InGaAs/AlAs RTDs …
(RTDs) are less than 2, significantly less than their counterparts, such as InGaAs/AlAs RTDs …
Emission linewidth broadening in quantum cascade lasers induced by multiple intersubband transitions
Extensive efforts are being made to improve the material quality of semiconductor quantum
cascade lasers (QCLs) to suppress the carrier scattering from the interface roughness (IFR) …
cascade lasers (QCLs) to suppress the carrier scattering from the interface roughness (IFR) …
Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation
B Zhang, L Yang, D Wang, K Cheng, B Sheng… - Applied Physics …, 2023 - pubs.aip.org
We report planar AlN/GaN resonant tunneling diodes (RTDs) fabricated using a nitrogen ion
implantation isolation process on silicon substrates. The active area of AlN/GaN RTDs is …
implantation isolation process on silicon substrates. The active area of AlN/GaN RTDs is …
Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect
ZA Lu, Z Zhao, Q Wan, JW Yu, D Ma - Vacuum, 2024 - Elsevier
We prepare a symmetrical double barrier structure of Mo/AlN/Mo/AlN/Mo by using the
reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling …
reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling …
Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications
Achieving ferroelectricity by incorporating rare-earth metals has been considered one of the
most important developments in III-nitride compound semiconductors in recent years …
most important developments in III-nitride compound semiconductors in recent years …