Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell… - Nature materials, 2006 - nature.com
Group-III-nitride semiconductors have shown enormous potential as light sources for full-
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …
Research challenges to ultra‐efficient inorganic solid‐state lighting
Solid‐state lighting is a rapidly evolving, emerging technology whose efficiency of
conversion of electricity to visible white light is likely to approach 50% within the next several …
conversion of electricity to visible white light is likely to approach 50% within the next several …
Effective band structure of random alloys
V Popescu, A Zunger - Physical review letters, 2010 - APS
Random substitutional A x B 1-x alloys lack formal translational symmetry and thus cannot
be described by the language of band-structure dispersion E (k→). Yet, many alloy …
be described by the language of band-structure dispersion E (k→). Yet, many alloy …
Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures
We have studied the low-temperature (T= 6 K) optical properties of a series of In Ga N∕ Ga
N single-quantum-well structures with varying indium fractions. With increasing indium …
N single-quantum-well structures with varying indium fractions. With increasing indium …
First-principles calculations of gap bowing in and alloys: Relation to structural and thermodynamic properties
First-principles pseudopotential plane-wave calculations are used to investigate the
electronic, structural, and thermodynamic properties of cubic nitride alloys In x Ga 1− x N …
electronic, structural, and thermodynamic properties of cubic nitride alloys In x Ga 1− x N …
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
We obtain temperature-dependent recombination coefficients by measuring the quantum
efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes …
efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes …
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow …
SF Chichibu, A Uedono, T Onuma, T Sota… - Applied Physics …, 2005 - pubs.aip.org
Room-temperature nonradiative lifetime (τ nr) of the near-band-edge excitonic
photoluminescence (PL) peak in {0001} polar,(11 2 0),(1 1 00), and (001) nonpolar GaN …
photoluminescence (PL) peak in {0001} polar,(11 2 0),(1 1 00), and (001) nonpolar GaN …
First-principles investigation of lattice constants and bowing parameters in wurtzite AlxGa1− xN, InxGa1− xN and InxAl1− xN alloys
First-principles calculations, by means of the full-potential augmented plane wave method
using the local density approximation, were carried out for the structural and electronic …
using the local density approximation, were carried out for the structural and electronic …