Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous...

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Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips

Y Fan, R An, J Tang, Y Li, T Liu, B Gao, H Qian… - Current Opinion in Solid …, 2024 - Elsevier
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
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Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

C Yoo, J Hartanto, B Saini, W Tsai, V Thampy… - Nano Letters, 2024 - ACS Publications
Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized
using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line …
Spara Citera Citerat av 3 Relaterade artiklar Alla 5 versionerna

Design guidelines for oxide semiconductor gain cell memory on a logic platform

S Liu, K Jana, K Toprasertpong, J Chen… - … on Electron Devices, 2024 - ieeexplore.ieee.org
We offer design guidelines with a top–down and bottom–up design approach for oxide
semiconductor (OS) transistors, optimized for gain cell memory on a logic platform. With high …
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Effect of oxygen treatment on the electrical performance and reliability of IWO thin-film transistors

YX Chen, YL Wang, FJ Li, SJ Chang… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this work, we systematically investigated the effect of oxygen treatment on the material
and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O 2 …
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Modeling and Understanding Threshold Voltage and Subthreshold Swing in Ultrathin Channel Oxide Semiconductor Transistors

K Jana, S Liu, K Toprasertpong, Q Jiang… - … on Simulation of …, 2024 - ieeexplore.ieee.org
We present a physics-based model for ultrathin channel oxide semiconductor field-effect
transistors (OSFETs) which successfully incorporates and explains several important OSFET …
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Annealing Strategy Toward Achieving High-Performance Indium Tungsten Oxide Thin-Film Transistors by Equilibrating Oxygen Vacancy and Chemisorbed Oxygen

Z Chen, Y Yan, G Ding, Y Zhou, S Han… - IEEE Transactions on …, 2025 - ieeexplore.ieee.org
High-performance thin-film transistors (TFTs) are crucial for advanced displays. The use of
metal oxide (MO) as an excellent semiconductor to achieve high-mobility TFTs comes with …
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BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in situ Electrothermal Annealing

B Qian, X Li, Y Liu, S Wang, J Meng… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Gate bias instability, a well-known issue in oxide semiconductors, is linked to their inherent
sensitivity to oxygen species. In this work, we systematically investigated the reliability of …
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High-Stability IWO Thin-Film Transistors under Microwave Annealing for Low Thermal Budget Application

YX Chen, YL Wang, FJ Li, HH Li… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
In this work, we investigated the effects of microwave thermal annealing (MWA) on the
electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors …
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